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| Laser Diode on Submount 1.0 W cw (Class 4 Laser Product) SPL CGxx (SFH 4804x2) Features * Efficient radiation source for cw and pulsed operation * Reliable InGa(Al)As strained quantum-well material * Single emitting area 200 m x 1 m * Small C-type copper submount for OEM designs Applications * Pumping solid state lasers (Nd: YAG, Yb: YAG, ...) * Laser soldering, heating, illumination * Printing, marking, surface processing * Medical applications * Testing and measurement applications Type SPL CG81 SPL CG85 SPL CG94 SPL CG98 Old Type (as of Oct. 1996) SFH 480402 - SFH 480442 - Wavelength 808 nm 850 nm 940 nm 980 nm *) Ordering Code Q62702-P358 on request Q62702-P1617 on request *) Other wavelengths in the range of 780 nm ... 980 nm are available on request. Maximum Ratings (TA = 25 C) Parameter Symbol min. Output power (continuous wave) 1) Output power (quasi-continuous wave) 1) (tp 150 s, duty cycle 1%) Reverse voltage Operating temperature 2) Storage temperature 2) Soldering temperature, max. 10 s 2) Bedewing is excluded Values typ. - - - ... ... - max. 1.1 1.5 3 + 60 + 85 140 Unit Popt Pqcw VR Top Tstg Ts - - - - 10 - 40 - W W V C C C 1) Optical power measurements refer to a detector with NA = 0.6 Semiconductor Group 1 02.97 SPL CGxx (SFH 4804x2) Characteristics (TA = 25 C) Parameter Symbol min. Emission wavelength 1) peak 803 840 935 Values typ. 808 850 940 2 1.0 0.75 0.75 0.70 0.40 0.30 0.30 1.3 1.3 1.4 0.95 0.85 0.80 0.45 0.40 0.35 1.5 1.5 1.6 2.0 - 0.2 150 0.5 0.25 0.27 10 0.30 0.4 1.1 1.0 0.9 0.55 0.50 0.40 1.8 1.8 1.8 max. 813 860 945 nm Unit Spectral width (FWHM) 1) Output power 2) Differential efficiency 2) 808 nm 850 nm 940 nm 808 nm 850 nm 940 nm 808 nm 850 nm 940 nm Popt nm W W/A Threshold current Ith A Operating current 1) Iop A Operating voltage 1) Differential series resistance Characteristic temperature (threshold) 3) Temperature coefficient of operating current Temperature coefficient of wavelength 4) Thermal resistance (junction heat sink) Vop rs T0 Iop/ T / T Rth JA V K %/K nm/K K/W 1) Standard operating conditions refer to 1 W cw measured with NA = 0.6 2) Optical power measurements refer to a detector with NA = 0.6 3) Model for the thermal behavior of threshold current: Ith(T2) = Ith(T1) x exp(T2 - T1)/T0 4) Depending on emission wavelength Semiconductor Group 2 SPL CGxx (SFH 4804x2) Optical Characteristics (TA = 25 C) Radiant Power Popt vs IF Mode Spectrum Irel vs (Popt = 1.0 W) Farfield Distribution Parallel to Junction Irel vs || Farfield Distribution Perpendicular to Junction Irel vs Semiconductor Group 3 09.96 SPL CGxx (SFH 4804x2) Notes for Operation 1. Eye Protection This laser is a Class 4 Laser product. Refer to the relevant safety regulations for protection during handling and operation. 2. Overload Protection The specified values are valid as long as the diode has not been not overloaded. Voltage spikes from the power supply unit, even when applied for nanoseconds only, may cause irreversible damage to the laser diode. Such spikes may occur when the power supply is turned on or off, or they may reach the laser diode from the line via the coupling capacitance of electronically controlled devices. The power supply should therefore be provided with appropriate protection circuits. Handling Notes 1. Package To avoid electrostatic damages it is recommended to observe the same rules as for handling MOS-devices. 2. Mounting When soldering, gluing or clamping, do not exceed the following limits: * max. soldering temperature: 140 C * max. soldering time: 10 s * max. curing temperature for adhesives: 100 C Any deformation of the heat sink by clamping must be avoided. 3. Electrical Connection The cathode may be bonded by spot-welding, clamping or soldering. In all these cases ESD-guidelines must be followed. Semiconductor Group 4 SPL CGxx (SFH 4804x2) Package Outlines (Dimensions in mm, unless specified). Semiconductor Group 5 09.96 |
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